Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe

J. Mizsei; O. Korolkov; J. Toompuu; V. Mikli; T. Rang

doi:10.4028/www.scientific.net/MSF.740-742.677

Paper Titles

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
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Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
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Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
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Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
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Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
p.677

4H-SiC Trench MOSFET with Thick Bottom Oxide
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An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
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Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
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Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Study of Surface Defects in 4H-SiC Schottky Diodes...

Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe

Abstract:

Abstract. In the present paper we attempt to study and explain the increased leakage currents in Schottky diodes with an integrated p-n-structure. By a scanning Kelvin probe method (vibrating capacitor) were obtained the local variations of surface contact potential difference (CPD) for the chips with large and small leakage currents. It is shown that samples with higher leakage currents have smaller surface potential barrier. The SEM investigations revealed that a critical role in increasing leakage currents play the dislocations penetrating from the substrate into the epitaxial layer.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

677-680

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.677

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Online since:

January 2013

Authors:

J. Mizsei, O. Korolkov, J. Toompuu, V. Mikli, T. Rang

Keywords:

Dislocation, Kelvin Probe Method, Leakage Current, Schottky Diode, SEM Investigation

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References

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