An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

K.W. Chu; C.T. Yen; Patrick Chung; C.Y. Lee; Tony Huang; Chih Fang Huang

doi:10.4028/www.scientific.net/MSF.740-742.687

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742An Improvement of Trench Profile of 4H-SiC Trench...

An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

Abstract:

A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using 12sccm/28sccm of SF6/Ar mixture, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 μm. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

687-690

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.687

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Online since:

January 2013

Authors:

K.W. Chu, C.T. Yen, Patrick Chung, C.Y. Lee, Tony Huang, Chih Fang Huang

Keywords:

Breakdown, Micro-Trenching, RIE Etching, SF₆/Ar, Silicon Carbide (SiC), TMBS

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References

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