Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability

Michael Grieb; Stefan Noll; Dick Scholten; Martin Rambach

doi:10.4028/www.scientific.net/MSF.740-742.703

Paper Titles

An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
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Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
p.691

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
p.695

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
p.699

Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
p.703

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
p.707

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors
p.711

Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces
p.715

Effects of a Post-Oxidation Annealing in Nitrous Oxide on the Morphological and Electrical Properties of SiO₂/4H-SiC Interfaces
p.719

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Influence of Post-Implantation Annealing...

Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability

Abstract:

In the present work, we studied the influence of the post-implantation annealing temperature on the performance and oxide reliability of lateral 4H-SiC MOSFETs. The maximum field effect mobility of the MOSFETs at 25°C decreases from 22.4cm²/Vs to 17.2cm²/Vs by increasing annealing temperature from 1600°C to 1800°C. Respectively, the measured meantime to failure is about one order of magnitude higher for the 1700°C annealed sample at an applied field of 8.5MV/cm compared to the 1600°C and 1800°C annealed samples.

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Materials Science Forum (Volumes 740-742)

Pages:

703-706

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.703

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Online since:

January 2013

Authors:

Michael Grieb, Stefan Noll, Dick Scholten, Martin Rambach

Keywords:

4H-SiC, Constant Voltage Stress, Deposited Oxide, Mobility, MOSFET, Reliability

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