Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

Tsuyoshi Akagi; Hiroshi Yano; Tomoaki Hatayama; Takashi Fuyuki

doi:10.4028/www.scientific.net/MSF.740-742.695

Paper Titles

Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
p.677

4H-SiC Trench MOSFET with Thick Bottom Oxide
p.683

An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
p.687

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
p.691

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
p.695

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
p.699

Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
p.703

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
p.707

Simulation and Optimization of 4H-SiC DMOSFET Power Transistors
p.711

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Effect of Interfacial Localization of Phosphorus...

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

Abstract:

Metal-oxide-semiconductor (MOS) capacitors with phosphorus localized near the SiO₂/SiC interface were fabricated on 4H-SiC by direct POCl₃ treatment followed by SiO₂ deposition. Post-deposition annealing (PDA) temperature affected MOS device properties and phosphorus distribution in the oxide. The sample with PDA at 800 °C showed narrow phosphorus-doped oxide region, resulting in low interface state density near the conduction band edge and small flatband voltage shift after FN injection. The interfacial localization of phosphorus improved both interface properties and reliability of 4H-SiC MOS devices.