Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

Christian T. Banzhaf; Michael Grieb; Achim Trautmann; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.740-742.691

Paper Titles

Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
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Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
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4H-SiC Trench MOSFET with Thick Bottom Oxide
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An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
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Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
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Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
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A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
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Influence of Post-Implantation Annealing Temperature on MOSFET Performance and Oxide Reliability
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Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Characterization of Diverse Gate Oxides on 4H-SiC...

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

Abstract:

This study focuses on the characterization of silicon dioxide (SiO₂) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (D_IT) of 1_*10¹¹ cm^-2eV^-1 under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

691-694

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.691

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Online since:

January 2013

Authors:

Christian T. Banzhaf, Michael Grieb, Achim Trautmann, Anton J. Bauer, Lothar Frey

Keywords:

3D, 4H, Breakdown, Interface, MOS, Oxide, Quality, Silicon Carbide (SiC), Trench

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References

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