4H-SiC Trench MOSFET with Thick Bottom Oxide

Hidefumi Takaya; Jun Morimoto; Toshimasa Yamamoto; Jun Sakakibara; Yukihiko Watanabe; Narumasa Soejima; Kimimori Hamada

doi:10.4028/www.scientific.net/MSF.740-742.683

Paper Titles

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
p.665

Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
p.669

Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
p.673

Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
p.677

4H-SiC Trench MOSFET with Thick Bottom Oxide
p.683

An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier
p.687

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures
p.691

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices
p.695

A Nanoscale Look in the Channel of 4H-SiC Lateral MOSFETs
p.699

HomeMaterials Science ForumMaterials Science Forum Vols. 740-7424H-SiC Trench MOSFET with Thick Bottom Oxide

4H-SiC Trench MOSFET with Thick Bottom Oxide

Abstract:

A 4H-SiC trench MOSFET has been developed that features trench gates with a thick oxide layer on the bottoms of the trenches. The maximum electric field strength and gate-drain charge of this device are 46% and 38%, respectively lower than that of a conventional MOSFET. The drain-source breakdown voltage is 1400V and the specific on-resistance is 4.4mΩcm2 at a gate bias of 20V and a drain voltage of 2V.