Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Thomas Sünner; Tim Behrens; Thomas Kaden

doi:10.4028/www.scientific.net/MSF.740-742.665

Paper Titles

Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
p.649

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.653

Piezoresistivity and Electrical Conductivity of SiC Thin Films Deposited by High Temperature PECVD
p.657

Radiation Defects Produced in 4H-SiC Epilayers by Proton and Alpha-Particle Irradiation
p.661

Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs
p.665

Stability Investigation of High Heat-Resistant Resin under High Temperature for Ultra-High Blocking Voltage SiC Devices
p.669

Stress Relaxation Study in 3C-SiC Microstructures by Micro-Raman Analysis and Finite Element Modeling
p.673

Study of Surface Defects in 4H-SiC Schottky Diodes Using a Scanning Kelvin Probe
p.677

4H-SiC Trench MOSFET with Thick Bottom Oxide
p.683

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Reliability Investigation of Drain Contact Metallizations for SiC-MOSFETs

Abstract:

The reliability of silicon carbide vertical DMOS drain metallizations was investigated using conditions close to a possible application setup. We monitored the adhesion of silicon carbide dies with different contacts and metallizations that were silver-sintered to a copper substrate. The temperature range in an anticipated automobile application ranges between -40°C and 250°C and the reliability tests were performed for temperature dwelling at 250°C in air and temperature swings between -40°C and 200°C.