Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Louise Lilja; Jawad Hassan; Ian D. Booker; Peder Bergman; Erik Janzén

doi:10.4028/www.scientific.net/MSF.740-742.637

Paper Titles

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
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Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
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Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates
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Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
p.633

Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
p.637

Introducing Color Centers to Silicon Carbide Nanocrystals for In Vivo Biomarker Applications: A First Principles Study
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Laplace Transform Deep Level Transient Spectroscopy Study of the EH_6/7 Center
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Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
p.649

Photoluminescence Imaging and Discrimination of Threading Dislocations in 4H-SiC Epilayers
p.653

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Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers

Abstract:

Carrier lifetime and formation of defects have been investigated as a function of growth temperature in n-type 4H-SiC epitaxial layers, grown by horizontal hot-wall CVD. Emphasis has been put on having fixed conditions except for the growth temperature, hence growth rate, doping and epilayer thickness were constant in all epilayers independent of growth temperature. An increasing growth temperature gave higher Z1/2 concentrations along with decreasing carrier lifetime. A correlation between growth temperature and D1 defect was also observed.