Electrical Characterisation of Epitaxially Grown 3C-SiC Films

Liu Di Jiang; Le Zhong; Fred Reed; Salim Taysir; Matteo Bosi; Giovanni Attolini

doi:10.4028/www.scientific.net/MSF.740-742.617

Paper Titles

Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
p.601

Dielectric Properties of Thermally Grown SiO₂ on 4H-SiC(0001) Substrates
p.605

Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609

Effects of Al Ion Implantation on 3C-SiC Crystal Structure
p.613

Electrical Characterisation of Epitaxially Grown 3C-SiC Films
p.617

Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
p.621

Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
p.625

Formation of Epitaxial Defects by Threading Screw Dislocations with a Morphological Feature at the Surface of 4º Off-Axis 4H-SiC Substrates
p.629

Influence of Epilayer Thickness and Structural Defects on the Minority Carrier Lifetime in 4H-SiC
p.633

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Electrical Characterisation of Epitaxially Grown...

Electrical Characterisation of Epitaxially Grown 3C-SiC Films

Abstract:

3C-SiC have been epitaxially grown through vapour phase expitaxy under a different grow conditions. Key electrical properties of these SiC layers have been characterised by fabrication and measurement of metal-SiC-metal devices. The electrical properties of SiC grown at different conditions have been analysed based on their structural and crystalline quality.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

617-620

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.617

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Online since:

January 2013

Authors:

Liu Di Jiang, Le Zhong, Fred Reed, Salim Taysir, Matteo Bosi, Giovanni Attolini

Keywords:

Carrier Concentration, Carrier Mobility, Electrical, Resistivity, Silicon Carbide (SiC)

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