3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption

Wei Zeng; Zhe Chuan Feng; Rui Sheng Zheng; Ling Yun Jang; Chee Wei Liu

doi:10.4028/www.scientific.net/MSF.740-742.573

Paper Titles

Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
p.557

Boron Diffusion in Silicon Carbide
p.561

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
p.565

Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
p.569

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
p.573

A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
p.577

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
p.581

Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
p.585

Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
p.589

HomeMaterials Science ForumMaterials Science Forum Vols. 740-7423C-, 4H- and 6H-SiC Bulks Studied by Silicon...

3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption

Abstract:

High-resolution synchrotron radiation X-ray absorption of Si K-edge have been employed to investigate 6H-, 4H- and 3C-SiC. Detailed analyses of the extended x-ray absorption fine structure are taken by using the IFEFFIT program, and significant results on the atomic bonding are obtained from these comparative studies. The x-ray absorption near-edge structures of the Si K-edge are investigated, and the electronic structure of 3C-, 4H- and 6H-SiC are studied. In order to investigate the angular dependence, the x-ray absorption near-edge spectra were operated at 55o and 90o of the angle between the surface and the X-ray direction.

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Materials Science Forum (Volumes 740-742)

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573-576

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.573

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Online since:

January 2013

Authors:

Wei Zeng, Zhe Chuan Feng, Rui Sheng Zheng, Ling Yun Jang, Chee Wei Liu

Keywords:

3C-SiC, 4H-SiC, 6H-SiC, Extended X-Ray Absorption Fine Structure, Synchrotron Radiation, X-Ray Absorption, X-Ray Absorption Fine Structure, X-Ray Absorption Near-Edge Structure

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