Aluminum Implantation in 4H-SiC: Physical and Electrical Properties

Jean François Michaud; X. Song; J. Biscarrat; F. Cayrel; Emmanuel Collard; D. Alquier

doi:10.4028/www.scientific.net/MSF.740-742.581

Paper Titles

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
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Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
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Aluminum Implantation in 4H-SiC: Physical and Electrical Properties
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Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
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Comparison of Etch Pit Shapes on Off-Oriented 4H-SiC Using Different Halogen Gases
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Complex Study of SiC Epitaxial Films
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Contact-Free Micropipe Reactions in Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Aluminum Implantation in 4H-SiC: Physical and...

Aluminum Implantation in 4H-SiC: Physical and Electrical Properties

Abstract:

For this study, 4H SiC samples were implanted with aluminum at room temperature, 200°C and 600°C with different energies, ranging from 30 to 380 keV, for a total dose of 4x1015 cm 2, to create a “box-like” profile. To activate dopants, samples were then isochronally annealed from 1650°C to 1850°C during 30min. The lowest specific contact resistance achieved, evaluated to 1.3x10-5 Ω.cm2, has been obtained for the 200°C implanted sample annealed at 1850°C. For this condition, Scanning Capacitance Microscopy study has proved that the dopant activity is quite homogeneous in opposition with the samples implanted at RT and 600°C.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

581-584

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.581

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Online since:

January 2013

Authors:

Jean François Michaud, X. Song, J. Biscarrat, F. Cayrel, Emmanuel Collard, D. Alquier

Keywords:

4H-SiC, Aluminium Implantation, Scanning Spreading Resistance Microscopy, Specific Contact Resistance

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