Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

Anatoly M. Strel'chuk; Evgenia V. Kalinina

doi:10.4028/www.scientific.net/MSF.740-742.565

Paper Titles

A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
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Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
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Boron Diffusion in Silicon Carbide
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Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
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A Possible Mechanism for Hexagonal Void Movement Observed during Sublimation Growth of SiC Single Crystals
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Recombination and Excess Currents in 4H-SiC...

Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region

Abstract:

Presented in this paper are the results of a study of forward and reverse current-voltage characteristics of the 4H-SiC pn structures produced by implantation of Al+ ions in low-doped ((5-7)∙1014cm-3) n-type conductivity epitaxial layer. A forward current was identified which is consistent with the model of recombination in the space charge region of a pn junction via a deep level: J=Joexp(qU/nkT), where Jo=Jo*exp[-Ea/(kT)] (or J= Jo*exp[(qU-2Ea)/nkT)]) with the ideality factor n=2. Parameters of this current are as follows: Jo(293 K) ~ 8∙10-25 A/cm2, Ea 1.73-1.75 eV (2Ea3.46-3.5 eV), Jo*~7∙105 A/cm2. A comparison of the experimental and model-based values of Ea, with allowance for all clearly defined temperature dependences, both strong and weak, of the model of recombination in the space charge region shows that the effective lifetime increases and effective trapping cross section σeff of the recombination level decreases with increasing temperature: σeff ~ T-2÷σeff ~ T-2.5 or σeff ~exp(ΔE /kT) where ΔE=80-100 meV. Reverse current practically in whole temperature range is excess current, only at high temperatures (~800 K) reverse current became close to generation current in space charge region. Special interest are the excess currents as a result of the application of a reverse or forward voltage at high temperature. The barrier type excess currents is characteristic of SiC.

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Materials Science Forum (Volumes 740-742)

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565-568

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.565

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January 2013

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Anatoly M. Strel'chuk, Evgenia V. Kalinina

Keywords:

4H-SiC, Excess Current, Lifetime, pn Structures, Recombination Current

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