Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors at Low Temperatures

Lucian Dragos Filip; Ioana Pintilie; Bengt Gunnar Svensson

doi:10.4028/www.scientific.net/MSF.740-742.557

Paper Titles

Characterization of POCl₃-Annealed 4H-Sic Mosfets by Charge Pumping Technique
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Evaluation of PBTS and NBTS in SiC MOS Using In Situ Charge Pumping Measurements
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A Study of High Temperature DC and AC Gate Stressing on the Performance and Reliability of Power SiC MOSFETs
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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress
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Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures
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Boron Diffusion in Silicon Carbide
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Recombination and Excess Currents in 4H-SiC Structure with Low-Doped n-Region
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Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure
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3C-, 4H- and 6H-SiC Bulks Studied by Silicon K-Edge X-Ray Absorption
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Evidence of Tunneling in n-4H-SiC/SiO2 Capacitors...

Evidence of Tunneling in n-4H-SiC/SiO₂ Capacitors at Low Temperatures

Abstract:

In this work, anomalous discontinuities observed in Capacitance-Voltage (C-V) characteristics on non-nitridated n-4H-SiC/SiO₂ capacitors at low temperature are addressed. The appearance of abrupt capacitance minima, always at the same gate voltages (4V and 8V) and independent on probe frequency, led us to consider a resonant electron tunneling process from neutral donor states present at the SiC/SiO₂ interface into two well defined energy levels in the oxide layer. Results of numerical simulations based on this model describe quantitatively the experimentally observed discontinuities at 4V and 8V and provide strong evidence for the presence resonant tunneling.

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Materials Science Forum (Volumes 740-742)

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557-560

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https://doi.org/10.4028/www.scientific.net/MSF.740-742.557

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Online since:

January 2013

Authors:

Lucian Dragos Filip, Ioana Pintilie, Bengt Gunnar Svensson

Keywords:

4H-SiC, Interface State, MOS, Near Interface States, Resonant Tunnelling

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