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Preface This volume is a collection of papers to be presented al the 10 th International Autumn Meeting "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which will take place from 21 - 26 September 2003 al the Seeholel Zeuthen, in the state of Brandenburg, Germany.
The Seehotel Zeuthen, near Berlin, is an excellent place for a forum for interaction between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and, to reflection on future aspects in the conversion era from the microelectronics to the nanoelectronics.
The main purpose was to hold an informal gathering between Eastern and Western researchers in the field of defect engineering and gettering.
Advanced Silicon Material 2.

Saddow 1 1 Electrical Engineering Dept., University of South Florida, Tampa, Florida 33620, USA 2 Caracal Inc., 611 Eljer Way, Ford City, Pennsylvania 16226, USA Keywords: homo-epitaxy, hot-wall, CVD Abstract.
Forum 389-393 (2002), p. 179 [2] K.
Forum 433-436 (2003), p. 161 [3] A.
Forum 338-342 (2000), p. 131 [4] O.
Agarwal, Advances in Silicon Carbide Processing and Applications (Artech House, Inc., Norwood 2004)

It is necessary to determine in advance their fertility and physical properties [6, 7].
Ciobanu, Particle Size Distribution of the Coal Bottom Ash from the Large Combustion Plant, Advanced Engineering Forum 13 (2015) 210-215
Bucşe, D.Ţugui, Environmental Strategies in Areas Affected by Ash from Large Combustion Plants, Advanced Engineering Forum 13( 2015) 206-209

Wellmann1,f 1Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany 2Research Center Jülich Institute for Advanced Simulation, Wilhelm-Johnen-Str., D-52428 Jülich, Germany 3Crystallography, Institute of Earth Sciences, Albert-Ludwigs-University Freiburg, Herrmann-Herder-Str. 5, D-79104 Freiburg i.
Br., Germany 4Chair of Materials Data Science and Materials Informatics, Faculty 5 - Georesources and Materials Engineering, RWTH Aachen University, 52056 Aachen, Germany ajohannes.steiner@fau.de, bbi.nguyen@fz-juelich.de, cmelissa.roder@krist.uni-freiburg.de, da.danilewsky@krist.uni-freiburg.de, es.sandfeld@fz-juelich.de, fpeter.wellmann@fau.de *corresponding author Keywords: silicon carbide, physical vapor transport, birefringence, KOH etching Abstract.
The defect count of TSDs and MPs in Fig. 3e) was approximated as 33 in total by means of image analysis using an algorithm developed by the Research Center Jülich Institute for Advanced Simulation.
Yang, Post-Growth Micropipe Formation in 4H-SiC, Materials Science Forum 858 (2016) 367-370
Wellmann, Development of a KOH Defect Etching Furnace with Absolute In-Situ Temperature Measurement Capability, Mat.Sci.Forum 483-485 (2005) 283

Materials Science Forum Vols. *** (2004) pp.260-263 online at http://scientific.net  2004 Trans Tech Publications, Switzerland A Study on the Microstructure of Nano-Scale Ceramic Tool Materials B.
Wang 1,d 1 Centre for Advanced Jet Engineering Technologies (CaJET), School of Mechanical Engineering, Shandong University, Jinan 250061, China a zou20011110@163.com, bchuanzhenh@sdu.edu.cn, clhl70@sdu.edu.cn, dsuilw@sdu.edu.cn Keywords: Nano-scale ceramics, Nano-composites, Microstructure Abstract.
It is considered that the essential reasons of the fracture Advances in Materials Manufacturing Science and Technology 262 mode transforming from the intergranular to intragranular fracture are the potential separation of micron-grains and the intensifying action of SiC particles on the boundary.
Vol. 85 ( 2002), p. 2678 Materials Science Forum Vols. *** 263 [4] J.F.
Warbichler, et al: Key Engineering Material Vol. 159-160 (1999), p. 405 [7] X.Q.

Janzén, Microelectronic Engineering 86 (2009) 1194
Saddow, Silicon Carbide Biotechnology - A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications, Elsevier, 2011
Computational Materials Science and Surface Engineering 2, No. 3-4 (2009) 227
Cheung, Materials Science Forum 711 (2011) 43
Alquier, Microelectronic Engineering 105 (2013) 65.

Mandal Department of Metallurgical & Materials Engineering, Indian Institute of Technology Roorkee, Roorkee, 247667, India E-mail: pkmmet@yahoo.in Keywords: Aluminium alloys, age-hardening, GP zones, anti-recrystallization, grain refinement, ScAl3 precipitates, thermal stability, mechanical behaviour.
Introduction 7xxx series (Al-Zn-Mg-Sc) Al alloys are widely used in aerospace and other advanced applications due to their spontaneously age-hardening ability and attractive mechanical properties [1-3].
Noble, Materials Science Forum, Vols. 519-521, pp. 339-344, 2006
Prangnell, Materials Science Forum, Vols. 396-402, pp. 757-762, 2002
Wang, Materials Science Forum, Vols. 546-549, pp. 867-870, 2007

Kimoto2 1Advanced Power Electronics Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, 305-8568, Japan 2Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto, 615-8510, Japan atetsuo-hatakeyama@aist.go.jp Keywords: SiO2/SiC, MOS, interface, trap, DLTS, SiC, mobility, interface state, CCDLTS, DLTFS Abstract.
Forum Vols. 600-603, 791(2009), T.
Forum Vols. 615-617, 557(2009) [2] S.
Forum Vols. 740-742, 477(2013)

Density of Etch Pits on C-face 4H-SiC Surface Produced by ClF3 Gas Hitoshi Habuka1, a, Kazuchika Furukawa1, a , Toshimitsu Kanai1, a and Tomohisa Kato2,b 1Department of Chemical and Energy Engineering, Yokohama National Univ., Japan 2Advanced Power Electronics Research Center, National Institutes of Advanced Science and Technology, Japan ahabuka1@ynu.ac.jp, bt-kato@aist.go.jp Keywords: 4H-SiC, C-face, Chlorine trifluoride gas, Etch pit Abstract.
Forum, Vol. 600-603 (2008) 655-658
Forum, Vol. 645-648 (2010) 787-790
Forum, 679-680 (2011) 286-289

Two methods to determine the core competences of leading international engineering constructor were confirmed.
Through the rational allocation and use of internal resources, enterprises’ capabilities were cultivate, such as advanced corporate culture, organization learning and innovation capabilities, powerful environmental adaptability.
In addition, if the engineering contractors play an important role in the major region markets, such as Asia, Europe or the Middle East, or in the main engineering and construction fields, such as transportation, petroleum or buildings.
(In Chinese) [2] Yu Zhang: Journal of engineering management.
(In Chinese) [16] Chai, ZX: ORIENT ACAD FORUM.