Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs

Abstract:

We investigated the short-circuit capabilities of 1.2 kV normally-off SiC buried gate static induction transistors (SiC-BGSITs). The maximum short-circuit energy was found to be 35.6 J/cm2, which is twice that of normally-on SiC-BGSITs and 3.3–5.6 times higher than that of the Si-IGBTs. The maximum short-circuit time was 590 μs. It is concluded that these high short-circuit capabilities result from saturation characteristics of the normally-off SiC-BGSITs.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 962-965
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.962
• Online since: January 2013
• Authors: Akio Takatsuka, Yasunori Tanaka, Koji Yano, Tsutomu Yatsuo, Kazuo Arai
• Keywords: Buried Gate Static Induction Transistor, Normally-Off, Short-Circuit Capability, Silicon Carbide (SiC)

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