Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET

Abstract:

The paper discusses the switching performance of the double-gate SiC trench JFET. In applications such as dc/dc converters, when fast switching is expected the standard totem-pole driver is not sufficient. The reason for this is that both the internal resistance and the parasitic capacitances of this device are significantly higher than for other designs. Instead, the gate driver with a dynamic current source is proposed in this paper to speed-up the switching process. Performed double-pulse measurements show improved dynamic performance of the tested DGTJFET with the new driver.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 946-949
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.946
• Online since: January 2013
• Authors: Jacek Rabkowski, Dimosthenis Peftitsis, Mietek Bakowski, Hans Peter Nee
• Keywords: Current-Source, Dual-Gate Trench (DGT) JFET, Gate Driver, SiC JFET, Switching Performance

References

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