Thermal Runaway Robustness of SiC VJFETs

Rémy Ouaida; Cyril Buttay; Anhdung Hoang; Raphaël Riva; Dominique Bergogne; Hervé Morel; Christophe Raynaud; Florent Morel

doi:10.4028/www.scientific.net/MSF.740-742.929

Paper Titles

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
p.911

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
p.915

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
p.921

A 69-mΩ 600-V-Class Hybrid JFET
p.925

Thermal Runaway Robustness of SiC VJFETs
p.929

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
p.934

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
p.938

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
p.946

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Thermal Runaway Robustness of SiC VJFETs

Thermal Runaway Robustness of SiC VJFETs

Abstract:

Silicon Carbide (SiC) Junction-Field Effect Transistors (JFETs) are attractive devices for power electronics. Their high temperature capability should allow them to operate with a reduced cooling system. However, experiments described in this paper conclude to the existence of runaway conditions in which these transistors will reach destructive temperatures.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

929-933

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.929

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Online since:

January 2013

Authors:

Rémy Ouaida, Cyril Buttay, Anhdung Hoang, Raphaël Riva, Dominique Bergogne, Hervé Morel, Christophe Raynaud, Florent Morel

Keywords:

High-Temperature, Junction Field Effect Transistor (JFET), Power Electronics, Thermal Runaway

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References

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