Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Florian Chevalier; P. Brosselard; D. Tournier; G. Grosset; L. Dupuy; D. Planson

doi:10.4028/www.scientific.net/MSF.740-742.938

Paper Titles

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
p.921

A 69-mΩ 600-V-Class Hybrid JFET
p.925

Thermal Runaway Robustness of SiC VJFETs
p.929

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
p.934

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
p.938

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
p.946

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
p.950

15 kV IGBTs in 4H-SiC
p.954

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Design and Characterization of a Novel Dual-Gate...

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET

Abstract:

This paper presents the methodology for the design of a novel 4H-SiC JFET structure able to sustain 3.3 kV. Comparisons between simulation and characterization res will be made. Taken into account the process limitation, we will also discuss the critical steps and their impact on the electrical characteristics. A design methodology based on Baliga's criterion is proposed to obtain the optimal structure. A 50 nm thick thermal oxide grown above vertical channel and the use of a buried p+ layer as second gate electrode are brand new in front of what is found in literature.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

938-941

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.938

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Online since:

January 2013

Authors:

Florian Chevalier, P. Brosselard, D. Tournier, G. Grosset, L. Dupuy, D. Planson

Keywords:

Dual Gate JFET, High Voltage Device, Junction Field Effect Transistor (JFET), Lateral Channel, Vertical Channel

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References

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