On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs

Tomohiro Tamaki; Shinya Ishida; Yoshikazu Tomizawa; Hiroyuki Nakamura; Yasuhiro Shirai; Satoru Akiyama; Haruka Shimizu; Natsuki Yokoyama

doi:10.4028/www.scientific.net/MSF.740-742.950

Paper Titles

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
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Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
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Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
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On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
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15 kV IGBTs in 4H-SiC
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Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
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Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
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High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742On-State and Switching Performance Comparison of A...

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs

Abstract:

We compare the on-state and switching performance of a 600 V-class Hybrid SiC junction field effect transistor (HJT) and Si superjunction MOSFETs (SJ-MOSs), both of which are packaged in TO-3P full-mold package, as a function of operating frequency. The maximum load current is limited by the package power dissipation rating determined by the maximum junction temperature. Since the HJT is composed of a SiC JFET and a low voltage Si MOSFET, the allowable maximum junction temperature of the HJT is the same as that of SJ-MOSFETs, namely 150 °C. The experimental results show that the maximum operating current of the HJT is comparable to that of SJ-MOSs, but the EMI noise of the HJT is much suppressed due to lower dV/dt.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

950-953

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.950

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Online since:

January 2013

Authors:

Tomohiro Tamaki, Shinya Ishida, Yoshikazu Tomizawa, Hiroyuki Nakamura, Yasuhiro Shirai, Satoru Akiyama, Haruka Shimizu, Natsuki Yokoyama

Keywords:

Cascode Configuration, Device Comparison, Junction Field Effect Transistor (JFET), Silicon Carbide (SiC), Superjunction, Switching

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