15 kV IGBTs in 4H-SiC

Sei Hyung Ryu; Craig Capell; Charlotte  Jonas; Michael J. O'Loughlin; Lin Cheng; Khiem Lam; Albert A. Burk; Jim Richmond; Jack Clayton; Allen Hefner; David Grider; Anant Agarwal; John W. Palmour

doi:10.4028/www.scientific.net/MSF.740-742.954

Paper Titles

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
p.938

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
p.946

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
p.950

15 kV IGBTs in 4H-SiC
p.954

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility
p.958

Experimental Study of Short-Circuit Capability of Normally-off SiC-BGSITs
p.962

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
p.966

1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
p.970

HomeMaterials Science ForumMaterials Science Forum Vols. 740-74215 kV IGBTs in 4H-SiC

15 kV IGBTs in 4H-SiC

Abstract:

The latest developments in ultra high voltage 4H-SiC IGBTs are presented. A 4H-SiC P-IGBT, with a chip size of 8.4 mm x 8.4 mm and an active area of 0.32 cm², which is double the active area of the previously reported devices [1], exhibited a blocking voltage of 15 kV, while showing a room temperature differential specific on-resistance of 41 mΩ-cm² with a gate bias of -20 V. A 4H-SiC N-IGBT with the same area showed a blocking voltage of 17 kV, and demonstrated a room temperature differential specific on-resistance of 25.6 mΩ-cm² with a gate bias of 20 V. Field-Stop buffer layer design was used to control the charge injection from the backside. A comparison between N- and P- IGBTs, and the effects of different buffer designs, are presented.