Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

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We fabricated and characterized an ultrahigh voltage (>10kV) p-channel silicon carbide insulated gate bipolar transistor (SiC-IGBT) with high channel mobility. Higher field-effect channel mobility of 13.5 cm2/Vs was achieved by the combination of adopting an n-type base layer with a retrograde doping profile and additional wet re-oxidation annealing (wet-ROA) at 1100°C in the gate oxidation process. The on-state characteristics of the p-channel SiC-IGBT at 200°C showed the low differential specific on-resistance of 24 mΩcm2 at VG = -20 V. The forward blocking voltage of the p-channel SiC-IGBT at 25°C was 10.2 kV a the leakage current density of 1.0 μA/cm2.

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Periodical:

Materials Science Forum (Volumes 740-742)

Edited by:

Alexander A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein

Pages:

958-961

DOI:

10.4028/www.scientific.net/MSF.740-742.958

Citation:

S. Katakami et al., "Fabrication of a P-Channel SiC-IGBT with High Channel Mobility", Materials Science Forum, Vols. 740-742, pp. 958-961, 2013

Online since:

January 2013

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$35.00

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