Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT

Abstract:

Non ion-implantation mesa etched 4H-SiC BJT with three-zone JTE of optimized lengths and doses (descending sequences) has been simulated. This design presents an efficient electric field distribution along the device. The device area has been optimized and considerably reduced. As a result of this comprehensive optimization, a high breakdown voltage and high current gain have been achieved; meanwhile the device area with a constant emitter and base contact area has been reduced by about 30%.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 974-977
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.974
• Online since: January 2013
• Authors: Arash Salemi, Hossein Elahipanah, Benedetto Buono, Carl Mikael Zetterling, Mikael Östling
• Keywords: Bipolar Junction Transistor (BJT), Junction Termination Extension (JTE), Non-Ion Implantation, Silicon Carbide (SiC)

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