Optical Triggering of 12 kV 1 cm2 4H-SiC Thyristors

Sergey L. Rumyantsev; Mikhail E. Levinshtein; Michael S. Shur; Tanuj Saxena; Q.J. Zhang; Anant Agarwal; L. Cheng; John W. Palmour

doi:10.4028/www.scientific.net/MSF.740-742.990

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Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
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Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors
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Optimization of Holding Current in 4H-SiC Thyristors
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High Temperature SiC Sensor with an Isolated Package
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Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Optical Triggering of 12 kV 1 cm2 4H-SiC...

Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors

Abstract:

We report on switch-on of 12 kV, 1cm2 optically triggered 4H-SiC thyristor fabricated by CREE Inc., to Imax=270 А with current rise time of ~ 3 s. Temperature dependence of holding current Ih in this thyristor has been experimentally studied in the temperature range from 300 to 425 K. It is shown that measurements of Ih temperature dependence under condition of optical switch-on at small anode bias and large load resistance reveal the existence of a ”weak point” within the optical window. This point is characterized by a much smaller critical charge than that within the remaining part of the window.

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Materials Science Forum (Volumes 740-742)

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990-993

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.990

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Online since:

January 2013

Authors:

Sergey L. Rumyantsev, Mikhail E. Levinshtein, Michael S. Shur, Tanuj Saxena, Q.J. Zhang, Anant Agarwal, L. Cheng, John W. Palmour

Keywords:

Optical Triggering, Power Device, Silicon Carbide (SiC), Thyristor

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References

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