High Temperature SiC Sensor with an Isolated Package

Florin Draghici; Gheorghe Brezeanu; Ion Rusu; Florin Bernea; Philippe Godignon

doi:10.4028/www.scientific.net/MSF.740-742.1002

Paper Titles

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
p.986

Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors
p.990

Optimization of Holding Current in 4H-SiC Thyristors
p.994

Micromechanics Based on Silicon Carbide
p.998

High Temperature SiC Sensor with an Isolated Package
p.1002

Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction
p.1006

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC
p.1010

Selective 4H-SiC UV Detectors
p.1014

Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide
p.1018

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742High Temperature SiC Sensor with an Isolated...

High Temperature SiC Sensor with an Isolated Package

Abstract:

This paper presents an improved version and new results on a temperature sensor based on SiC Schottky Barrier Diode (SBD). SiC SBD structures of different areas were packaged in a metallic-glass case. The encapsulated sensor was electrically measured at several temperatures. A good linearity of the forward voltage measured at a constant current versus temperature dependence was obtained in the temperature range of 150-400°C where the sensor is meant to operate. Optical investigation, correlated with electrical measurements, prove the reliability of the sensor structure and of the package solutions at temperatures up to 400°C.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1002-1005

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1002

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Online since:

January 2013

Authors:

Florin Draghici, Gheorghe Brezeanu, Ion Rusu, Florin Bernea, Philippe Godignon

Keywords:

High Temperature Testing, Packaged Temperature Sensor, Schottky Diode

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References

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