Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction

Abstract:

This paper describes the physical and electrical properties of a p-n Si/on-axis SiC vertical heterojunction rectifier. A thin 400nm p-type silicon layer was wafer-bonded to a commercial on-axis SiC substrate by room temperature hydrophilic wafer bonding. Transmission electron microscopy was used to identify the crystallographic orientation as (0001)SiC//(001)Si and to reveal an amorphous interfacial layer. Electrical tests performed on the p-n heterodiodes revealed that, after an additional 1000oC anneal, the rectifier exhibit remarkably low leakage current (10nA/cm2 at an anode voltage of V=-6V), improved on-resistance due to bipolar injection and a turn-on voltage close to the p-n heterojunction theoretical value of 2.4V.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 1006-1009
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.1006
• Online since: January 2013
• Authors: Peter Michael Gammon, Amador Pérez-Tomás, Michael R. Jennings, Ana M. Sanchez, Craig A. Fisher, Stephen M. Thomas, Benedict T. Donnellan, Philip Andrew Mawby
• Keywords: Bipolar Conduction, Heterojunction, PiN Diode, Silicon Carbide (SiC), TEM, Wafer Bonding

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