Micromechanics Based on Silicon Carbide

Olga N. Astashenkova; Andrej V. Korlyakov; Victor V. Luchinin

doi:10.4028/www.scientific.net/MSF.740-742.998

Paper Titles

Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters
p.982

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
p.986

Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors
p.990

Optimization of Holding Current in 4H-SiC Thyristors
p.994

Micromechanics Based on Silicon Carbide
p.998

High Temperature SiC Sensor with an Isolated Package
p.1002

Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction
p.1006

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC
p.1010

Selective 4H-SiC UV Detectors
p.1014

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Micromechanics Based on Silicon Carbide

Micromechanics Based on Silicon Carbide

Abstract:

This paper describes using of silicon carbide for micromechanical systems. Low stressed sensitive membrane signal converters, thin film transducers and piezoresistive sensors were formed based on silicon carbide films. The mechanical properties of silicon carbide films were determined.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

998-1001

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.998

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Online since:

January 2013

Authors:

Olga N. Astashenkova, Andrej V. Korlyakov, Victor V. Luchinin

Keywords:

Magnetron Deposition, Mechanical Property, Mechanical Stress, Micromechanics, Silicon Carbide Films

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References

[1] O.N. Astashenkova, A.M. Efremenko, A.V. Korlyakov, O.A. Testov, The influence of electron bombardment during growth on the properties of silicon carbide layers obtained by magnetron sputtering / / Vacuum equipment and technology. T. 19, № 3, 2009. , P. 139-143.

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