Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters

Leonid Fursin; Frank Hoffmann; John Hostetler; Xue Qing Li; Matthew Fox; Peter Alexandrov; Mari Anne Gagliardi; Mark Holveck

doi:10.4028/www.scientific.net/MSF.740-742.982

Paper Titles

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications
p.966

1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules
p.970

Area-Optimized JTE for 4.5 kV Non Ion-Implanted 4H-SiC BJT
p.974

15 kV, Large Area (1 cm²), 4H-SiC p-Type Gate Turn-Off Thyristors
p.978

Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters
p.982

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE
p.986

Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors
p.990

Optimization of Holding Current in 4H-SiC Thyristors
p.994

Micromechanics Based on Silicon Carbide
p.998

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Development of High-Voltage 4H-SiC GTOs for...

Development of High-Voltage 4H-SiC GTOs for Grid-Tied Solar Inverters

Abstract:

A growing demand for smart and flexible photovoltaic power conversion and pulsed-power systems is leading to rapid development and commercialization of medium voltage 6.5 - 24 kV, wide-bang gap rectifiers and switches. Conventional silicon bipolar switches are limited to roughly 8 kV breakdown voltages and scaling up the voltage rating requires very thick wafers presenting significant manufacturing challenges. Very thick drift layers of silicon devices also translate into a very high minority carrier charge injected during forward conduction for an efficient conductivity modulation, hence leading to an extremely slow switching speed and poor efficiency. In this paper USCi presents the development of 6.5 kV 4H-SiC gate-turn-off thyristors (GTOs) with multiple floating guard-ring edge termination, and describes their application in an AC-link grid-tied solar inverter system.

You might also be interested in these eBooks

Solar Energy: Engineering of Solar Energy Systems

View Preview

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

982-985

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.982

Citation:

Cite this paper

Online since:

January 2013

Authors:

Leonid Fursin, Frank Hoffmann, John Hostetler, Xue Qing Li, Matthew Fox, Peter Alexandrov, Mari Anne Gagliardi, Mark Holveck

Keywords:

4H-SiC, AC-Link, Gate Turn-Off Thyristor, Grid-Tied Inverter, GTO, High Voltage (HV), Power, Series Triggering, Silicon Carbide (SiC), Solar Inverter

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. G. Sundaresana, H. Issa, D. Veereddy and R. Singh Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs, Mat. Sci. Forum. 645-648 (2010) 1021-1024.

DOI: 10.4028/www.scientific.net/msf.645-648.1021

Google Scholar

[2] A. Agarwa1, Q. Zhang, R. Callanan, C. Capell, A. Burk, M. O'Loughlin, J. Palmour, V. Temple, R. Stahlbush, J. Caldwell, H. O'Brien, and C. Scozzie 9 kV, 1 cm2 SiC Gate Turn-Off Thyristors, Mat. Sci. Forum. 645-648 (2010) 1017-1020.

DOI: 10.4028/www.scientific.net/msf.645-648.1017

Google Scholar

[3] Q. C. Zhang, C. Jonas, B. Heath, M. K. Das, S. H. Ryu, A. K. Agarwal, J. J. Palmour 9 kV 4H-SiC IGBTs with 88 mΩ·cm2 of R diff, on, Mat. Sci. Forum. 556-557 (2007) 771-774.

DOI: 10.4028/www.scientific.net/msf.556-557.771

Google Scholar

[4] E. Limpaecher, F. Hoffmann, G. Deffley, W. Zhou 750kW AC-link Power Converter for Renewable Generation and Energy Storage Applications, 2011 IEEE EnergyTech Conference Proceedings, pp.1-6.

DOI: 10.1109/energytech.2011.5948513

Google Scholar

[5] J. Hu, L. X. Li, P. Alexandrov, X. Wang, and J. Zhao 5-kV, 9. 5 A SiC JBS Diodes with Non-uniform Guard Ring Edge Termination for High Power Switching Application, Materials Science Forum, Vols. 600-603 (2009), pp.947-950.

DOI: 10.4028/www.scientific.net/msf.600-603.947

Google Scholar