Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Sigo Scharnholz; Ralf Hassdorf; Gontran Pâques; Bertrand Vergne; Dominique Planson

doi:10.4028/www.scientific.net/MSF.740-742.986

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Pulse Current Characterization of SiC GTO...

Pulse Current Characterization of SiC GTO Thyristors with Etched JTE

Abstract:

In this paper we highlight our latest results on high voltage SiC thyristors comprising an etched JTE. Compared to our previous design concepts, the thyristors described here are larger in size and have been investigated regarding pulsed power applications. Quasi-static on-state characteristics show that the devices withstand a repetitive current load of up to 16 A corresponding to a current density of 825 A/cm². Their switching behavior was evaluated up to 1000 V demonstrating characteristic waveforms at turn-on and gate turn-off. Moreover, pulsed current characteristics show that the typical device under test sustained a current pulse of 20 μs with a peak value of 200 A and 10 kA/cm², respectively.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

986-989

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.986

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Online since:

January 2013

Authors:

Sigo Scharnholz, Ralf Hassdorf, Gontran Pâques, Bertrand Vergne, Dominique Planson

Keywords:

Edge Termination, Gate Turn-Off, GTO, Junction Termination Extension (JTE), Pulsed Power, Thyristor

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