1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules

M. Domeij; A. Konstantinov; B. Buono; M. Bast; R. Eisele; L. Wang; A. Magnusson

doi:10.4028/www.scientific.net/MSF.740-742.970

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-7421200 V, 3.3 mΩ SiC Bipolar Junction Transistor...

1200 V, 3.3 mΩ SiC Bipolar Junction Transistor Power Modules

Abstract:

Epoxy moulded power modules with a small footprint of 40 mm x 55 mm were fabricated with two switches, each consisting of six parallel 1200 V 50 A rated BJTs and Schottky diodes. The SiC-based power modules have very low on-resistance of 3.3 mΩ and a current gain of 80, both at room temperature. An inverter with specially designed drive circuits was constructed using the power modules and an efficiency of 98.5 % was shown for an output power of 12 kW.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

970-973

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.970

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Online since:

January 2013

Authors:

M. Domeij, A. Konstantinov, B. Buono, M. Bast, R. Eisele, L. Wang, A. Magnusson

Keywords:

Bipolar Junction Transistor (BJT), Inverter, Power Module

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References

[1] M. Domeij et. al., Large area 1200 V SiC BJTs with b>100 and rON<3 mWcm2, Materials Science Forum, Vols. 717-720, 2012, pp.1123-1126.

DOI: 10.4028/www.scientific.net/msf.717-720.1123

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[2] L. Wang and H. Baengtsson, How to Control SiC BJT with High Efficiency, 2012 7th International Conference on Integrated Power Electronics Systems (CIPS), 2011, p.4.

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