High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications

Luigia Lanni; B. Gunnar Malm; Carl Mikael Zetterling; Mikael Östling

doi:10.4028/www.scientific.net/MSF.740-742.966

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742High-Temperature Characterization of 4H-SiC...

High-Temperature Characterization of 4H-SiC Darlington Transistors for Low Voltage Applications

Abstract:

4H-SiC bipolar Darlington transistors (D-BJTs) for low voltage applications have been fabricated, simulated and characterized up to 300 °C, where they exhibit a current gain of 460. The influence on D-BJT current gain of relative current capability of driver and output BJTs has been investigated, and the collector resistance has been identified as the main limitation for the D-BJTs.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

966-969

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.966

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Online since:

January 2013

Authors:

Luigia Lanni, B. Gunnar Malm, Carl Mikael Zetterling, Mikael Östling

Keywords:

Bipolar Junction Transistor (BJT), Darlington Pairs, High-Temperature, Silicon Carbide (SiC)

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References

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