Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

Alexey V. Afanasyev; Boris V. Ivanov; Vladimir A. Ilyin; Alexey F. Kardo-Sysoev; Maria A. Kuznetsova; Victor V. Luchinin

doi:10.4028/www.scientific.net/MSF.740-742.1010

Paper Titles

Optimization of Holding Current in 4H-SiC Thyristors
p.994

Micromechanics Based on Silicon Carbide
p.998

High Temperature SiC Sensor with an Isolated Package
p.1002

Bipolar Conduction across a Wafer Bonded p-n Si/SiC Heterojunction
p.1006

Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC
p.1010

Selective 4H-SiC UV Detectors
p.1014

Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide
p.1018

Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
p.1024

Properties of Graphene Side Gate Transistors
p.1028

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Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC

Abstract:

This paper presents the results of research and development of two types diode structures based on wide bandgap 4H-SiC: drift step recovery diodes (DSRDs) and field emission diodes (FED). Diodes’ structure and manufacturing methods are reviewed. Diode’s characteristics were obtained (static current-voltage characteristics and capacitor-voltage characteristic, switching properties’ characteristics for DSRDs). Field emission 4H-SiC structures illustrated high (≥10² А/сm²) current densities at electric field intensity of approximately 10V/um. 4H-SiC DSRDs in the generator structure with a single oscillating contour allowed to form sub nanosecond impulses at a load 50 Ohm and 1,5-2kV amplitude for a single diode (current density at V=2kV J= 4•10³ А/сm²),what is significantly higher than similar DSRD’s parameters obtained for silicon.