Properties of Graphene Side Gate Transistors

Abstract:

Epitaxial graphene grown on semiinsulating silicon carbide was used to fabricate side gate graphene transistors. The transconductance of the side gate transistors is comparable to top gate designs. The transconductance decreases with increasing gate width independently on the gate to channel distance in agreement with the transconductance reduction in top gate transistor configu¬rations with increasing channel length. The transconductance of the side gate transistors decreases with increasing channel width due to a decreased specific gate capacitance.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 1028-1031
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.1028
• Online since: January 2013
• Authors: Bernd Hähnlein, Benjamin Händel, Frank Schwierz, Joerg Pezoldt
• Keywords: Epitaxy, Field Effect Transistor, Graphen

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