Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles

Satoshi Tanimoto; Hidekazu Tanisawa; Kinuyo Watanabe; Kohei Matsui; Shinji Sato

doi:10.4028/www.scientific.net/MSF.740-742.1040

Paper Titles

Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
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Properties of Graphene Side Gate Transistors
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Investigation of Die Attach for SiC Power Device for 300°C Applications
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Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
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Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles
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Electromagnetic Interference in Silicon Carbide DC-DC Converters
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4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
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Complementary JFET Logic for Low-Power Applications in Extreme Environments
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PWM Power Supply Using SiC RESURF JFETs with High Speed Switching
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Power Module Package Structure Capable of...

Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles

Abstract:

A new SiC power module package structure is proposed that is capable of withstanding greater ΔTj cycle stress. Its most notable feature is the use of a SiN substrate having Cu/Invar/Cu foils (C/I/C thickness ratio of 1/8/1) brazed on both sides as conductor plates. The CIC foils show a very low coefficient of thermal expansion (CTE) of 5.1 ppm/°C and therefore can significantly reduce package degradation resulting from the larger CTE mismatch of the conductor to SiC and SiN. A thermal cycle test (TCT) was conducted between -40°C and 250°C (ΔTj = 290°C). It was found that the SiC/Au-Ge/CIC-SiN die attachment maintained joint strength of 78 MPa even after 3000 cycles.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1040-1043

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1040

Citation:

Cite this paper

Online since:

January 2013

Authors:

Satoshi Tanimoto, Hidekazu Tanisawa, Kinuyo Watanabe, Kohei Matsui, Shinji Sato

Keywords:

Au-Ge, Ceramic, CIC, Die Attach, High-Temperature, Module, Package, Power Device

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References

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