4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

Mihaela Alexandru; Viorel Banu; Philippe Godignon; Miguel Vellvehi; José Millan

doi:10.4028/www.scientific.net/MSF.740-742.1048

Paper Titles

Investigation of Die Attach for SiC Power Device for 300°C Applications
p.1032

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
p.1036

Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles
p.1040

Electromagnetic Interference in Silicon Carbide DC-DC Converters
p.1044

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
p.1048

Complementary JFET Logic for Low-Power Applications in Extreme Environments
p.1052

PWM Power Supply Using SiC RESURF JFETs with High Speed Switching
p.1056

High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET
p.1060

High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide
p.1065

HomeMaterials Science ForumMaterials Science Forum Vols. 740-7424H-SiC Digital Logic Circuitry Based on P+...

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology

Abstract:

The design and development of SiC integrated circuits (ICs) nowadays is a necessity due to the increasing demand for high temperature intelligent power applications and intelligent sensors. Due to the superior electrical, mechanical and chemical proprieties of 4H-SiC poly-type, 4H-SiC MESFET transistor is a good compromise for ICs on SiC able to work at higher temperatures (HT) than on Si. This paper presents new experimental results of approaching embedded logic gates with SiC MESFETs and resistors, built in junction-isolated tubs. The P+ implantation isolation technology offers important perspectives regarding the integration density of devices per unit area and wafer surface, being able to use far more complex design geometry for modeling ICs on SiC.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1048-1051

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1048

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Online since:

January 2013

Authors:

Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miguel Vellvehi, José Millan

Keywords:

4H-SiC, Flip-Flop, Integrated Circuit, Logic Gates, MESFET, P+ Implanted Isolation Walls

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References

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