Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Toshihiko Hayashi; Toru Izumi; Tetsuro Hemmi; Katsunori Asano

doi:10.4028/www.scientific.net/MSF.740-742.1036

Paper Titles

Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide
p.1018

Fabrication of Broadband Antireflective Sub-Wavelength Structures on Fluorescent SiC
p.1024

Properties of Graphene Side Gate Transistors
p.1028

Investigation of Die Attach for SiC Power Device for 300°C Applications
p.1032

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices
p.1036

Power Module Package Structure Capable of Surviving Greater ΔTj Thermal Cycles
p.1040

Electromagnetic Interference in Silicon Carbide DC-DC Converters
p.1044

4H-SiC Digital Logic Circuitry Based on P+ Implanted Isolation Walls MESFET Technology
p.1048

Complementary JFET Logic for Low-Power Applications in Extreme Environments
p.1052

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Insulating Properties of Package for...

Insulating Properties of Package for Ultrahigh-Voltage, High-Temperature Devices

Abstract:

Insulating properties of package for ultrahigh-voltage, high-temperature devices have been investigated. While all the packages have enough insulating strength at room temperature, deterioration of the insulating property at high temperature has been found with some packages. The authors have found that this deterioration is attributed to degrade the insulation property of AlN ceramics for DBC substrate at high temperature and that there is a various degree in the deterioration.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

1036-1039

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.1036

Citation:

Cite this paper

Online since:

January 2013

Authors:

Toshihiko Hayashi, Toru Izumi, Tetsuro Hemmi, Katsunori Asano

Keywords:

Si₃N₄, 4H-SiC, Aluminum Nitride (AlN), Breakdown Strength, Insulating Property, Package, Power Module

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T. Nakamura, T. Otsuka, Y. Nakano, M. Miura and A. Kamisawa, ICSCRM 2009 (Th-2A-1).

Google Scholar

[2] A. B. Lostetter, J. Hornberger, B. McPherson, J. Bourne, R. Shaw, E. Cilio, W. Cilio, B. Reese, E. Heinrichs, T. McNutt and M. Schupbach, Mater. Sci. Forum, Vols. 717-720 (2011), pp.1219-1224.

DOI: 10.4028/www.scientific.net/msf.717-720.1219

Google Scholar

[3] K. Matsui, Y. Zushi, Y. Murakami, S. Tanimoto and S. Sato, Mater. Sci. Forum, Vols. 717-720 (2011), pp.1233-1236.

Google Scholar

[4] T. Ruemenapp and D. Peier, 8th International Conference on Dielectric Materials, Measurements and Applications, 473 (2000), pp.285-290.

Google Scholar

[5] T. Ruemenapp and D. Peier, High Voltage Engineering Symposium, Vol. 4 (1999), pp.373-376.

Google Scholar

[6] S. Dagdag, T. Lebey, S. Dinculescu, J. Saiz and E. Dutarde, European Conference on Power Electron and Applications, (2007), pp.1-9.

DOI: 10.1109/epe.2007.4417337

Google Scholar