Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

Hua Khee Chan; Rupert C. Stevens; Jonathan P. Goss; Nicholas G. Wright; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.740-742.934

Paper Titles

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
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Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
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A 69-mΩ 600-V-Class Hybrid JFET
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Thermal Runaway Robustness of SiC VJFETs
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Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
p.934

Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
p.938

Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET
p.942

Evaluation of the Drive Circuit for a Dual Gate Trench SiC JFET
p.946

On-State and Switching Performance Comparison of A 600 V-Class Hybrid SiC JFET and Si Superjunction MOSFETs
p.950

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Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise

Abstract:

Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400°C and 500°C in furnaces open to air for 1000 hours. I"-" V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I"-" V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400°C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500°C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/ƒ dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to R_DS which is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.