900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical JFET

Kiran Chatty; David C. Sheridan; Volodymyr Bondarenko; Robin Schrader; Jeffrey B. Casady

doi:10.4028/www.scientific.net/MSF.740-742.915

Paper Titles

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
p.899

Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
p.903

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
p.907

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
p.911

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
p.915

Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
p.921

A 69-mΩ 600-V-Class Hybrid JFET
p.925

Thermal Runaway Robustness of SiC VJFETs
p.929

Reliability Evaluation of 4H-SiC JFETs Using I-V Characteristics and Low Frequency Noise
p.934

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742900V, 1.46mOhm-cm2 4H-SiC Depletion Mode Vertical...

900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET

Abstract:

We report a 900V 4H-SiC depletion mode (DM) VJFET with a specific on-resistance (R_DSON,SP) of 1.46mOhm-cm² at V_GS=2.5V, I_DS=10A. The R_DSON,SP of the DM VJFET, designed for 600V-800V applications, is one of the lowest reported for a VJFET and is an order of magnitude lower compared to best Si Super Junction (SJ) MOSFETs reported in the literature. The turn-on (E_ON), turn-off (E_OFF) and total (E_TOTAL) switching energies of the DM-VJFET at VDD=400V, I_DS=32.5A are 146uJ, 168uJ and 314uJ respectively. The switching figure of merit R_DSON×Q_G is 3.8Ohm-nC; this is comparable to or better than the reported SJ-MOSFETs.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

915-920

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.915

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Online since:

January 2013

Authors:

Kiran Chatty, David C. Sheridan, Volodymyr Bondarenko, Robin Schrader, Jeffrey B. Casady

Keywords:

600V-900V, Depletion Mode, Vertical Trench JFET

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