Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime

Koji Nakayama; Atsushi Tanaka; Katsunori Asano; Tetsuya Miyazawa; Hidekazu Tsuchida

doi:10.4028/www.scientific.net/MSF.740-742.903

Paper Titles

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
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Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
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16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
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SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
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Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
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Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
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Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
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900V, 1.46mOhm-cm² 4H-SiC Depletion Mode Vertical JFET
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Reliable Operation of SiC Junction-Field-Effect-Transistor Subjected to over 2 Million 600-V Hard Switch Stressing Events
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Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime

Abstract:

The electrical characteristics of 4H-SiC pin diodes with 8H-type in-grown stacking faults are investigated. The pin diodes have epilayers with low Z_1/2 center concentration formed by using the carbon implantation process. The forward voltage drops of the diode with 8H-type in-grown stacking faults are larger than those of the diode without a 8H-type in-grown stacking fault. At room temperature, the differential on-resistance of the pin diode with 8H-type in-grown stacking faults is larger than the value calculated from donor concentration in the drift layer by using the current transportation model of the unipolar device. Meanwhile, the differential on-resistances of the pin diode with 8H-type in-grown stacking faults decrease with an increase in temperature and become smaller than the calculated value at temperature of more than 200 °C.