16 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Lin Cheng; Anant K. Agarwal; Michael J. O'Loughlin; Craig Capell; Khiem Lam; Charlotte  Jonas; Jim Richmond; Albert A. Burk; John W. Palmour; Aderinto Ogunniyi; Heather O’Brien; Charles Scozzie

doi:10.4028/www.scientific.net/MSF.740-742.895

Paper Titles

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
p.887

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
p.891

16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
p.895

SXRT Investigations on Electrically Stressed 4H-SiC PiN Diodes for 6.5 kV
p.899

Influence of in-Grown Stacking Faults on Electrical Characteristics of 4H-SiC Pin Diode with Long Carrier Lifetime
p.903

Development of High-Voltage 4H-SiC PiN Diodes on 4° and 8° Off-Axis Substrates
p.907

Electrical Characterization of PiN Diodes with p⁺ Layer Selectively Grown by VLS Transport
p.911

HomeMaterials Science ForumMaterials Science Forum Vols. 740-74216 kV, 1 cm2, 4H-SiC PiN Diodes for Advanced...

16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications

Abstract:

In this work, we report our recently developed 16 kV, 1 cm², 4H-SiC PiN diode results. The SiC PiN diode was built on a 120 µm, 2×10¹⁴/cm³ doped n-type SiC drift layer with a device active area of 0.5175 cm². Forward conduction of the PiN diode was characterized at temperatures from 20°C to 200°C. At high injection-current density (J_F) of 350 ~ 400 A/cm², the differential on-resistance (R_ON,diff) of the SiC PiN diode decreased from 6.08 mΩ·cm² at 20°C to 5.12 mΩ·cm² at 200°C, resulting in a very small average temperature coefficient of –5.33 µΩ·cm²/°C, while the forward voltage drop (V_F) at 100 A/cm² reduced from 4.77 V at 20°C to 4.17 V at 200°C. This is due to an increasing high-level carrier lifetime with an increase in temperature, resulting in reduced forward voltage drop. We also observed lower R_ON,diff at higher injection-current densities, suggesting that a higher carrier lifetime is needed in this lightly doped n-type SiC thick epi-layer in order to achieve full conductivity modulation. The anode to cathode reverse blocking leakage current was measured as 0.9 µA at 16 kV at room temperature.