Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Pavel A. Ivanov; Igor V. Grekhov; Alexander S. Potapov; Natalya D. Il'inskaya; Oleg I. Kon'kov; Tatyana P. Samsonova

doi:10.4028/www.scientific.net/MSF.740-742.877

Paper Titles

Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
p.865

SiC High Power Devices – Challenges for Assembly and Thermal Management
p.869

Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
p.873

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881

Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
p.887

Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures
p.891

16 kV, 1 cm², 4H-SiC PiN Diodes for Advanced High-Power and High-Temperature Applications
p.895

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Reverse Leakage Currents in High-Voltage 4H-SiC...

Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes

Abstract:

High-voltage 4H-SiC Schottky Barrier Diodes (SBDs) and Junction Barrier Schottky (JBS) diodes have been fabricated and evaluated. Current-voltage (I-V) characteristics were measured in a wide temperature range. All diodes fabricated showed nearly ideal forward behavior. For SBDs with Schottky Barrier Height (SBH) of 1.12 eV, the reverse I–V characteristics are described well by the thermionic emission model (at voltages varying from several mV to 2 kV and temperatures ranging from 361 to 470 K) if barrier lowering with increasing band bending is taken into account. For SBDs with SBH of 1.53 eV, no thermionic current was detected in reverse direction at temperatures below ~500 K. The leakage currents appeared only at high reverse voltages and elevated temperatures. The analysis of reverse I-V characteristics allowed to propose dislocation related mechanism of current flow due to the local injection of electrons from metal to semiconductor. It is shown that defect related leakage currents can be significantly reduced by JBS-structure.