Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

Pavel A. Ivanov; Igor V. Grekhov

doi:10.4028/www.scientific.net/MSF.740-742.865

Paper Titles

Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
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Pressureless Silver Sintering Die-Attach for SiC Power Devices
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Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
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Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
p.865

SiC High Power Devices – Challenges for Assembly and Thermal Management
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Remarkable Increase in Surge Current Capability of SiC Schottky Diodes Using Press Pack Contacts
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Reverse Leakage Currents in High-Voltage 4H-SiC Schottky Diodes
p.877

Electrical Characteristics of Large Chip-Size 3.3 kV SiC-JBS Diodes
p.881

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Subnanosecond Semiconductor Opening Switch Based...

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode

Abstract:

Mesa-epitaxial 4H-SiC p⁺-p-n_o-n⁺-diodes were fabricated and their reverse recovery characteristics were measured in pulse regimes to be relevant to DSRD- and SOS-modes of operation [I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544]. It has been found that after short pumping the diodes by forward current pulse (5-ns duration, 200-A/cm² peak current density) followed by applying the reverse voltage pulse (rise time 2 ns) the diodes are able to interrupt the reverse current density of 3.5 - 25 kA/cm² in a time less than 0.3 ns.

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

865-868

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.865

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Online since:

January 2013

Authors:

Pavel A. Ivanov, Igor V. Grekhov

Keywords:

4H-SiC Junction Diode, Semiconductor Opening Switch, Subnanosecond Operation

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References

[1] I.V. Grekhov, G.A. Mesyats, Physical basis for high-power semiconductor nanosecond opening switches, IEEE Transactions on Plasma Science 28 (2000) 1540-1544.

DOI: 10.1109/27.901229

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[2] I.V. Grekhov, P.A. Ivanov, D.V. Khristyuk, A.O. Konstantinov, S.V. Korotkov, T.P. Samsonova, Sub-nanosecond semiconductor opening switches based on 4H-SiC p+-po-n+-diodes, Solid-State Electronics 47 (2003) 1769-1774.

DOI: 10.1016/s0038-1101(03)00157-6

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