Pressureless Silver Sintering Die-Attach for SiC Power Devices

Stanislas Hascoët; Cyril Buttay; Dominique Planson; Rodica Chiriac; Amandine Masson

doi:10.4028/www.scientific.net/MSF.740-742.851

Paper Titles

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
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Multi-Wire Electrical Discharge Slicing for Silicon Carbide
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Slicing of Rotating SiC Ingot by Electric Discharge Machining
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Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
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Pressureless Silver Sintering Die-Attach for SiC Power Devices
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Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
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Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

Subnanosecond Semiconductor Opening Switch Based on 4H-SiC Junction Diode
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SiC High Power Devices – Challenges for Assembly and Thermal Management
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Pressureless Silver Sintering Die-Attach for SiC...

Pressureless Silver Sintering Die-Attach for SiC Power Devices

Abstract:

Pressureless silver sintering is an interesting die-attach technique that could overcome the reliability limitations of the power electronic devices caused by their packaging. In this paper, we study the manufacturing parameters that affect the die attach: atmosphere, drying time, heating ramp rate, sintering temperature and duration. It is found that sintering under air gives better results, but causes the substrates to oxidize. Sintering under nitrogen keeps the surfaces oxide-free, at the cost of a weaker attach.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

851-854

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.851

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Online since:

January 2013

Authors:

Stanislas Hascoët, Cyril Buttay, Dominique Planson, Rodica Chiriac, Amandine Masson

Keywords:

Die Attach, Silver Sintering

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References

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