Multi-Wire Electrical Discharge Slicing for Silicon Carbide

Atsushi Itokazu; Takashi Hashimoto; Kazuhiko Fukushima; Takashi Yuzawa; Tatsushi Sato

doi:10.4028/www.scientific.net/MSF.740-742.841

Paper Titles

ICP Etching of 4H-SiC Substrates
p.825

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C
p.829

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model
p.833

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
p.837

Multi-Wire Electrical Discharge Slicing for Silicon Carbide
p.841

Slicing of Rotating SiC Ingot by Electric Discharge Machining
p.843

Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
p.847

Pressureless Silver Sintering Die-Attach for SiC Power Devices
p.851

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
p.855

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Multi-Wire Electrical Discharge Slicing for Silicon Carbide

Abstract:

In this paper, we propose a new wafer slicing method for silicon carbide(SiC). SiC is well-known as a difficult-to-cut material, and a conventional slicing via multi-wire saw becomes more difficult with increasing ingot size. To solve this problem, the multi-wire electrical discharge slicing (EDS) method is applied to 100 mm-square SiC polycrystalline block. We successfully obtained the average thickness of 385 μm for nine sliced plates by ten-wires EDS. The thickness variation was measured to be less than 11.2 μm. This is the first demonstration of ten-wires EDS for 100 mm-square SiC material.