Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C

Yong Zhao Yao; Yukari Ishikawa; Koji Sato; Yoshihiro Sugawara; Katsunori Danno; Hiroshi Suzuki; Takeshi Bessho

doi:10.4028/www.scientific.net/MSF.740-742.829

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Large-Area Mapping of Dislocations in 4H-SiC from...

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C

Abstract:

To solve the problem that no preferential chemical etching is available for dislocation revelation from the carbon-face (C-face) of 4H-SiC, a novel etching technique using vaporized KOH has been developed. It was found that this etching technique can reveal the three commonly found dislocation types, i.e., threading screw dislocations (TSDs), threading edge dislocations (TEDs) and basal plane dislocations (BPDs) as large hexagonal, small hexagonal and triangular, respectively. Centimeter-scale dislocation mapping has been obtained, and the pit positions on the C-face were compared with those on the Si-face, to study the dislocation propagation behaviors across the sample thickness. We have found one-to-one correlation for nearly 96% of the TSDs, indicating a dominant proportion of TSDs penetrate the whole wafer thickness. The vaporized KOH etching technique has provided an effective and inexpensive method of making inch-scale mapping of dislocation distribution for the C-face epitaxial and bulky 4H-SiC.

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Materials Science Forum (Volumes 740-742)

Pages:

829-832

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.829

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Online since:

January 2013

Authors:

Yong Zhao Yao, Yukari Ishikawa, Koji Sato, Yoshihiro Sugawara, Katsunori Danno, Hiroshi Suzuki, Takeshi Bessho

Keywords:

4H-SiC, Activation Energy, Carbon-Face (000-1), Chemical Etching, Defect-Selective, Dislocation, Vaporized KOH

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