ICP Etching of 4H-SiC Substrates

Jerome Biscarrat; Jean François Michaud; Emmanuel Collard; Daniel Alquier

doi:10.4028/www.scientific.net/MSF.740-742.825

Paper Titles

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
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Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer
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Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
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First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications
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ICP Etching of 4H-SiC Substrates
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Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C
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Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model
p.833

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
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Multi-Wire Electrical Discharge Slicing for Silicon Carbide
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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742ICP Etching of 4H-SiC Substrates

ICP Etching of 4H-SiC Substrates

Abstract:

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

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Silicon Carbide and Related Materials 2012

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Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

825-828

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.825

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Online since:

January 2013

Authors:

Jerome Biscarrat, Jean François Michaud, Emmanuel Collard, Daniel Alquier

Keywords:

Inductively Coupled Plasma Etching, Silicon Carbide (SiC), Trenching

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