Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Yasuto Hijikata; Shuhei Yagi; Hiroyuki Yaguchi; Sadafumi Yoshida

doi:10.4028/www.scientific.net/MSF.740-742.833

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HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Model Calculations of SiC Oxide Growth Rates at...

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model

Abstract:

We found that the ‘Si and C emission model’ that we proposed as an oxidation model of SiC could not reproduce the initial oxide growth rates of SiC at sub-atmospheric pressures. The comparison between calculated and observed growth rates suggests that the oxide growth on the oxide surface is enhanced in the initial oxidation stage and thus our oxidation model is inaccurate in the description on the surface oxidation. Accordingly, we reconsidered the parameters on surface oxidation and, as a result, found that a much enlarged oxygen concentration on the oxide surface is necessary for solving the discrepancy between calculated and observed growth rates.

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Silicon Carbide and Related Materials 2012

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Materials Science Forum (Volumes 740-742)

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833-836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.833

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Online since:

January 2013

Authors:

Yasuto Hijikata, Shuhei Yagi, Hiroyuki Yaguchi, Sadafumi Yoshida

Keywords:

C Emission, MOS Structure, Oxidation, Oxide-Semiconductor Interface, Si Emission, Silicon Carbide (SiC)

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