Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics

Abstract:

In this work SiC-based MIS capacitors have been fabricated with different contact/high-k dielectric combinations and the temperature dependence of the characteristics have been examined in an N₂ ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO₂ or HfO₂ high-k dielectric, all of which are grown on a thin SiO₂ layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N2 ambient between 323K and 673K and observations show that V_FB reduces with increasing temperature. The majority of this variation is caused a reduction in the D_it influencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower V_TH of SiC-based MOSFETs at high temperatures.

• Periodical: Materials Science Forum (Volumes 740-742)
• Pages: 837-840
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.740-742.837
• Online since: January 2013
• Authors: Benjamin J.D. Furnival, Sandip Kumar Roy, Nicolas G. Wright, Alton B. Horsfall
• Keywords: Gas Sensing, High-Temperature, MIS Capacitor, Nitrogen, Reliability, Silicon Carbide (SiC)

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