Slicing of Rotating SiC Ingot by Electric Discharge Machining

Norimasa Yamamoto; Satarou Yamaguchi; Tomohisa Kato

doi:10.4028/www.scientific.net/MSF.740-742.843

Paper Titles

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C
p.829

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model
p.833

Influence of Contact Metallisation on the High Temperature Characteristics of High-κ Dielectrics
p.837

Multi-Wire Electrical Discharge Slicing for Silicon Carbide
p.841

Slicing of Rotating SiC Ingot by Electric Discharge Machining
p.843

Study on Reactive Species in Catalyst-Referred Etching of 4H–SiC using Platinum and Hydrofluoric Acid
p.847

Pressureless Silver Sintering Die-Attach for SiC Power Devices
p.851

Process Tolerant Single Photolithography/Implantation 120-Zone Junction Termination Extension
p.855

Solar-to-Hydrogen Conversion Efficiency of Water Photolysis with Epitaxially Grown p-Type SiC
p.859

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Slicing of Rotating SiC Ingot by Electric Discharge Machining

Abstract:

A new method of electric discharge machining (EDM) is proposed for slicing a large silicon carbide (SiC) ingot in order to realize low kerf loss and fast cut. This principle is based on the rotating ingot, and it is called the rotating slicing method (RSM). It would be defecate the cutting chip effectively and one-point discharge. In this paper, we reported results of examinations of the RSM experimentally. Unstable discharge was not observed. Discharge damages on the wire surface were fewer than those of the conventional method. Net cutting speed was almost the same as the present method for the 2-inches ingot. The rotation axis of the ingot should be perpendicular to the feed direction of the wire, and it is important to fix the performance of the EDM such as the kerf loss. Roughness of the cutting surface was 3.4 µm of R_a