Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

J.H. Choi; Laurence Latu-Romain; Edwige Bano; Anne Henry; Won Jae Lee; Thierry Chevolleau; Thierry Baron

doi:10.4028/www.scientific.net/MSF.740-742.817

Paper Titles

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices
p.801

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure
p.805

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
p.809

Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer
p.813

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
p.817

First Experimental Functionalization Results of SiC Nanopillars for Biosensing Applications
p.821

ICP Etching of 4H-SiC Substrates
p.825

Large-Area Mapping of Dislocations in 4H-SiC from Carbon-Face (000-1) by Using Vaporized KOH Etching near 1000 °C
p.829

Model Calculations of SiC Oxide Growth Rates at Sub-Atmospheric Pressures Using the Si and C Emission Model
p.833

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Comparative Study on Dry Etching of α- and β-SiC...

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars

Abstract:

A comprehensive study on different polytypes (α-SiC and β-SiC) and crystal orientations ((0001) and (11-20) of 6H-SiC) has been investigated in order to elaborate Silicon carbide (SiC) nanopillar using inductively coupled plasma etching method. The SiC nanopillars with the cross section of rhombus, pentagon, and hexagonal have been obtained on β-SiC (001), misoriented α-SiC (11-20), and α-SiC (0001) on-axis substrates, respectively. It was found that crystal orientations and polytypes play key roles for the morphology of SiC nanopillars, which reflects the so-called Wulff's rule.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

817-820

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.817

Citation:

Cite this paper

Online since:

January 2013

Authors:

J.H. Choi, Laurence Latu-Romain, Edwige Bano, Anne Henry, Won Jae Lee, Thierry Chevolleau, Thierry Baron

Keywords:

Dry Etching, Nanopillar, SiC Polytypes

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H.K. Seong, H.J. Choi, S.K. Lee, J.I. Lee, D.J. Choi, Optical and electrical transport properties in silicon carbide nanowires, Appl Phys Lett, 85 (2004) 1256-1258.

DOI: 10.1063/1.1781749

Google Scholar

[2] M. Bechelany, A. Brioude, P. Stadelmann, G. Ferro, D. Cornu, P. Miele, Very long SiC-based coaxial nanocables with tunable chemical composition, Adv Funct Mater, 17 (2007) 3251-3257.

DOI: 10.1002/adfm.200700110

Google Scholar

[3] A. Kathalingam, M.R. Kim, Y.S. Chae, S. Sudhakar, T. Mahalingam, J.K. Rhee, Self-assembled micro-masking effect in the fabrication of SiC nanopillars by ICP-RIE dry etching, Appl Surf Sci, 257 (2011) 3850-3855.

DOI: 10.1016/j.apsusc.2010.11.053

Google Scholar

[4] J.H. Choi, L. Latu-Romain, E. Bano, F. Dhalluin, T. Chevolleau, T. Baron, Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching, J Phys D Appl Phys 45 (2012) 235204.

DOI: 10.1088/0022-3727/45/23/235204

Google Scholar

[5] Information on http: /www. tankeblue. com.

Google Scholar

[6] I.G. Yeo, W.S. Yang, J.H. Park, H.B. Ryu, W.J. Lee, B.C. Shin, S. Nishino, Two-inch a-plane (11-20) 6H-SiC crystal grown by using the PVT method from a small rectangular substrate, J Korean Phys Soc, 58 (2011) 1541-1544.

DOI: 10.3938/jkps.58.1541

Google Scholar

[7] A. Henry, E. Janzén, E. Mastropaolo, R. Cheung, Single crystal and polycrystalline 3C-SiC for MEMS Applications, Mater Sci Forum, 615-617 (2009) 625.

DOI: 10.4028/www.scientific.net/msf.615-617.625

Google Scholar

[8] H. Nagasawa, K. Yagi, T. Kawahara. 3C-SiC hetero-epitaxial growth on undulant Si (001) substrate. J Cryst Growth 237 - 239 (2002)1244-1249.

DOI: 10.1016/s0022-0248(01)02233-3

Google Scholar

[9] R. Padiyath, R. L. Wright, M.I. Chaudhry, S. V. Babua, Reactive ion etching of monocrystalline, polycrystalline, and amorphous silicon carbide in CF4/O2 mixtures, Appl Phys Lett 58 (1991) 1053.

DOI: 10.1063/1.104420

Google Scholar