Optimization of Copper Top-Side Metallization for High Performance SiC-Devices

Tim Behrens; Thomas Suenner; Eckart Geinitz; Andreas Schletz; Lothar Frey

doi:10.4028/www.scientific.net/MSF.740-742.801

Paper Titles

Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth
p.785

Effect of Damage Removal Treatment after Trench Etching on the Reliability of Trench MOSFET
p.789

Filling of Deep Trench by Epitaxial SiC Growth
p.793

Ni, NiSi₂ and Si Secondary Ohmic Contacts on SiC with High Thermal Stability
p.797

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices
p.801

Preparation and Characterization of Deposited Tetraethylorthosilicate-SiO₂/SiC MIS Structure
p.805

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures
p.809

Basic Experiment on Atmospheric-Pressure Plasma Etching with Slit Aperture for High-Efficiency Dicing of SiC Wafer
p.813

Comparative Study on Dry Etching of α- and β-SiC Nano-Pillars
p.817

HomeMaterials Science ForumMaterials Science Forum Vols. 740-742Optimization of Copper Top-Side Metallization for...

Optimization of Copper Top-Side Metallization for High Performance SiC-Devices

Abstract:

While aluminum-based metallization schemes on Si have been optimized for the last decades, only few investigations have been done on copper metallization with SiC-devices. Thus, in this work the mechanical as well as the electrical interactions of this metallization system have been analyzed and optimized for SiC-devices in high reliability applications. For optimizing the adhesion of the copper metallization stack on SiC devices, different metallization schemes consisting of adhesion promoters (Ti, Cr, Al, Ta, WTi), diffusion barriers (TiN, Ta, WTi), and the final copper layer have been tested by peel-tests. For investigating the electrical interactions TLM measurements as well as leakage-current measurements have been done on copper metalized SiC samples.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2012

View Preview

Info:

Periodical:

Materials Science Forum (Volumes 740-742)

Pages:

801-804

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.740-742.801

Citation:

Cite this paper

Online since:

January 2013

Authors:

Tim Behrens, Thomas Suenner, Eckart Geinitz, Andreas Schletz, Lothar Frey

Keywords:

Adhesion, Copper Metallization, Electronic Packaging, Peel Test, SiC Ohmic Contact, Silicon Carbide (SiC), Thick Wire Bonding

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] K. Guth et al, New assembly and interconnects beyond sintering methods, Proc. PCIM Europe 2010, Nuremberg, (2010).

Google Scholar

[2] J. Croften et al, The Physics of Ohmic Contacts to SiC, phys. stat. sol. (b) 202 (1997) 581-603.

Google Scholar

[3] Y. Ezer et al, Diffusion Barrier Performance of thin Cr Films in the Cu/Cr/Si structure, Materials Research Bulletin Vol. 33, No. 9, (1998) 1331–1337.

DOI: 10.1016/s0025-5408(98)00117-2

Google Scholar

[4] T. Laurila et al., Chemical stability of Ta diffusion barrier between Cu and Si, Thin Solid Films 373 (2000) 64-67.

DOI: 10.1016/s0040-6090(00)01102-0

Google Scholar

[5] S. -Q. Wang et al, Diffusion barrier properties of TiW between Si and Cu, Journal of applied Physics 73 (1993) 2301–2320.

DOI: 10.1063/1.353135

Google Scholar

[6] V. K. Khanna, Adhesion–delamination phenomena at the surfaces and interfaces in microelectronics and MEMS structures and packaged devices, Journal of Physics D: Applied Physics 44 (2011) 1-19.

DOI: 10.1088/0022-3727/44/3/034004

Google Scholar